Blue Luminescence and Annealing Characteristic of Si  ̄+-Implanted SiO2 Films on Crystalline Silicon 注Si~+热氧化SiO2薄膜的蓝光发射及其退火特性
Also, the blue shift depends on ion dose, energy as well as the annealing condition. 蓝移的大小与量子阱的宽度,阱距表面深度,注入离子剂量,能量,及退火条件有关。
The results indicate that the blue shift of band gap depends on the annealing temperature and annealing time. Choosing reasonable annealing condition can control the magnitude of blue shift. 实验结果表明,带隙蓝移同退火时间和退火温度有关,合理选用退火条件可以控制带隙的蓝移量。
Blue luminescence with peak wavelength of about ( 431 nm) is obtained from epitaxial silicon after C~ (+) implantation, annealing in hydrogen and electrochemical etching sequentially. N型外延硅经过碳注入、氢气氛下高温退火和电化学腐蚀后,发出峰值波长位于431nm左右的蓝色荧光。
In this paper, a wet solid phase mechanochemical method was used to synthesize the precursor of rare earth aluminate blue emitting phosphor. The phase evolution during milling and annealing process were examined by using XRD and DTA TG analysis technology. 采用湿固相机械化学法制备稀土铝酸盐蓝色荧光粉前驱体,用XRD和DTATG分析技术研究了湿固相球磨过程和后续煅烧过程中的物相转变。
The blue up-conversion emission increased gradually with increasing of annealing temperature and pump power. 随着退火温度的升高,蓝色上转换发射逐渐增强;用不同的泵浦功率泵浦同种样品,得到蓝色上转换发光强度随泵浦功率的增加而增加;
It is found that room temperature blue light can be obtained from the hydrogen-implanted silicon carbide with proper carbon content. The annealing temperature influences the luminescence obviously. 摘要首次研究了硅中碳氢共注样品的发光性能c发现在适当碳含量的碳化硅样品中注入氢可以获得室温蓝光发射,追火温度对荧光有明显的影响。
Improving sintering temperature is conducive to the blue emission. Annealing makes UV emission peak of the film happen blue-shift and blue-ray emission peak happen red-shift. 提高灼烧温度有利于提高薄膜样品的蓝光发射,退火使薄膜的紫外发光峰发生蓝移,蓝光发光峰发生红移。